Silicon carbide (SiC) is a promising semiconductor materials for energy digital gadgets, however it suffers from bipolar degradation, which severely limits its lifespan. To handle this long-standing concern in an economical method, researchers have developed a proton implantation-based suppression technique that may forestall the enlargement of stacking faults, which lie on the root of bipolar degradation. This improvement might pave the best way for dependable, economical, and energy environment friendly SiC semiconductor gadgets.
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